The high-flux free-electron lasers being developed for EUV can also deliver a better wavelength for lithography, i.e., 4.5 nm. This change, together with diffractive microlenses in a maskless lithography scheme, called X-ZPAL, will outperform EUV and lower the cost of semiconductor manufacturing. The elements X-ZPAL will be described along with the innovations resulting from its adoption. |
